Stud electrode and process for making same

ABSTRACT

A process of making a stud capacitor structure is disclosed. The process includes embedding the stud in a dielectric stack. In one embodiment, the process includes forming an electrically conductive seed film in a contact corridor of the dielectric stack. A storage cell stud is also disclosed. The storage cell stud can be employed in a dynamic random-access memory device. An electrical system is also disclosed that includes the storage cell stud.

This application is a Divisional of U.S. application Ser. No.10/634,163, filed Aug. 5, 2003, now U.S. Pat. No. 7,230,292, which isincorporated herein by reference.

TECHNICAL FIELD

The technical field relates to semiconductor processing. Moreparticularly, one embodiment relates to a process of making a studelectrode.

BACKGROUND

Semiconductor processing is an intensive activity during which thefabrication of several devices is integrated to achieve a workingmicroelectronic device. Miniaturization is the process of crowding moresemiconductive devices onto a smaller substrate area in order to achievebetter device speed, lower energy usage, and better device portability,among others. New processing methods must often be developed to enableminiaturization to be realized.

As the footprint of a DRAM cell has continued to decrease in size, theneed for a large capacitor has remained. As the container capacitor isphysically shrunk, the inner surface of the storage node becomesrelatively smaller due to issues such as photolithography limitationsand sloping sidewalls from the etch process. Thus, what is needed is adata storage device that overcomes some of the challenges of the priorart.

SUMMARY

The above mentioned problems and challenges are overcome by embodimentsset forth herein.

In one embodiment, a stud capacitor structure includes a substratecontaining semiconductor devices that provides contacts at the surfacewhich are connected to the lower semiconductor devices. A firstdielectric stack is disposed above the upper surface of the substrate. Acontact corridor is opened in the first dielectric stack, and a firstconductive plug is disposed in the contact corridor. A barrier structureis disposed in immediate contact with the first conductive plug. A seedfilm is disposed in the contact corridor in contact with the barrierstructure. The seed film may extend along the sidewalls of the contactcorridor to the surface of the dielectric stack and may further extendlaterally from the contact corridor on the surface of the firstdielectric stack. The seed film must, however, remain electricallyisolated from neighboring contact corridors. A storage cell stud ispartially embedded in the contact corridor in contact with the seedfilm. Additionally, the storage cell stud is used as the stud electrodefor a stud capacitor that is one embodiment. A storage cell dielectricfilm is disposed over the storage cell stud. A storage cell plate isdisposed over the storage cell dielectric film.

In one embodiment a process is disclosed. The structure is subjected tovarious processes to arrive at a stud capacitor structure with anembedded stud. A first conductive plug is formed by deposition andetchback. A diffusion barrier protective structure is formed above thefirst conductive plug. In one embodiment, the diffusion barrier isformed above and on a second conductive plug that is in a contactcorridor above the first conductive plug. In one embodiment, thediffusion barrier is formed above and on the first conductive plug.

A seed film is formed over the diffusion barrier in the contactcorridor. The seed film is used to facilitate the electroplating of thestorage cell stud. A dielectric stack is formed above the seed film, anda second contact corridor is opened that exposes the seed film. In oneembodiment, an electrolytic through-hole deposition process is used toform the storage cell stud. In one embodiment, an electroless platingprocess is carried out to form a through-hole storage cell stud. In oneembodiment, the storage cell stud is formed from the same metal as theseed film.

Subsequent to the formation of the storage cell stud, a storage celldielectric film is formed. In one embodiment, a high permitivitymaterial is selected. After the formation of the storage cell dielectricfilm a storage cell plate is formed. In one embodiment, the storage cellplate is the same material as the storage cell stud.

In another embodiment, a variety of devices and apparatuses can bemanufactured that include the storage cell stud. In another embodiment,specific systems can be made that include the stud capacitor structure.For example, a chip package can contain a stud capacitor structure suchas one set forth in this disclosure. In another embodiment, the studcapacitor structure is part of an electrical device that includes thesemiconductor substrate in a chip package and the chip package is partof a memory module or part of a chipset. In another embodiment, thememory module is part of a dynamic random access memory module that isinserted into a host such as a motherboard or a digital computer. Inanother embodiment, the stud capacitor structure is part of anelectronic system.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to illustrate the manner in which embodiments are obtained, amore particular description will be rendered by reference to specificembodiments which are illustrated in the appended drawings.Understanding that these drawings depict only typical embodiments thatare not necessarily drawn to scale and are not therefore to beconsidered to be limiting of its scope, the invention will be describedand explained with additional specificity and detail through the use ofthe accompanying figures in which:

FIG. 1 is a cross section of a stud capacitor structure according to anembodiment;

FIG. 1A is a cross section of the stud capacitor structure depicted inFIG. 1 during processing according to an embodiment;

FIG. 1B is a cross section of the structure depicted in FIG. 1A afterfurther processing;

FIG. 1C is a cross section of the structure depicted in FIG. 1B afterfurther processing;

FIG. 1D is a cross section of the structure depicted in FIG. 1C afterfurther processing;

FIG. 1E is a cross section of the structure depicted in FIG. 1D afterfurther processing;

FIG. 1F is a cross section of the structure depicted in FIG. 1E afterfurther processing;

FIG. 1G is a cross section of the structure depicted in FIG. 1F afterfurther processing;

FIG. 2 is a process flow diagram that illustrates various exemplaryprocess embodiments that relate to FIGS. 1, 1A, 1B, 1C, 1D, 1E, 1F, and1G;

FIG. 3 is a cross section of another stud capacitor structure accordingto an embodiment;

FIG. 3A is a cross section of the stud capacitor structure depicted inFIG. 3 during processing according to another embodiment;

FIG. 3B is a cross section of the structure depicted in FIG. 3A afterfurther processing;

FIG. 3C is a cross section of the structure depicted in FIG. 3B afterfurther processing;

FIG. 3D is a cross section of the structure depicted in FIG. 3C afterfurther processing;

FIG. 3E is a cross section of the structure depicted in FIG. 3D afterfurther processing;

FIG. 3F is a cross section of the structure depicted in FIG. 3E afterfurther processing;

FIG. 3G is a cross section of the structure depicted in FIG. 3F afterfurther processing;

FIG. 4 is a process flow diagram that illustrates various exemplaryprocess embodiments that relate to FIGS. 3, 3A, 3B, 3C, 3D, 3E, 3F, and3G;

FIG. 5 is a top view of a wafer or substrate containing semiconductordies in accordance with an embodiment;

FIG. 6 is a block diagram of a circuit module in accordance with anembodiment;

FIG. 7 is a block diagram of a memory module in accordance with anembodiment;

FIG. 8 is a block diagram of an electronic system in accordance withanother embodiment;

FIG. 9 is a block diagram of a memory system in accordance with anembodiment; and

FIG. 10 is a block diagram of a computer system in accordance with anembodiment.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings which form a part hereof, and in which is shown,by way of illustration, specific ways which embodiments may bepracticed. In the drawings, like numerals describe substantially similarcomponents throughout the several views. These embodiments are describedin sufficient detail to enable those skilled in the art to practicevarious embodiments. Other embodiments may be utilized and structural,logical, and electrical changes may be made without departing from thescope of the various embodiments. The terms wafer and substrate used inthe following description include any structure having an exposedsurface with which to form an integrated circuit (“IC”) structureembodiment.

The term substrate is understood to include semiconductor wafers. Theterm substrate is also used to refer to semiconductor structures duringprocessing, and may include other layers that have been fabricatedthereupon. Both wafer and substrate include doped and undopedsemiconductors, epitaxial semiconductor layers supported by a basesemiconductor or insulator, as well as other semiconductor structureswell known to one skilled in the art. The term conductor is understoodto include semiconductors, and the term insulator or dielectric isdefined to include any material that is less electrically conductivethan the materials referred to as conductors.

The term “horizontal” is defined as a plane parallel to the conventionalplane or surface of a wafer or substrate, regardless of the orientationof the wafer or substrate. The term “vertical” refers to a directionperpendicular to the horizontal as defined above. Prepositions, such as“on”, “side” (as in “sidewall”), “higher”, “above”, “lower”, “over”,“below”, and “under” are defined with respect to the conventional planeor surface being on the top surface of the wafer or substrate,regardless of the orientation of the wafer or substrate. The followingdetailed description is, therefore, not to be taken in a limiting sense,and the scope of the present invention is defined only by the appendedclaims, along with the full scope of equivalents to which such claimsare entitled.

FIG. 1 is a cross section of a stud capacitor structure 100 according toan embodiment. A substrate 110 includes an active area (not pictured)and a series of gate stacks 112, 114, 116, and 118. Between the gatestacks 112 and 114 is a first cell first conductive plug 120. Betweenthe gate stacks 114 and 116 is a digit line conductive plug 122. Andbetween the gate stacks 116 and 118 is a second cell first conductiveplug 124. By way of non-limiting example, the cell first conductiveplugs 120, 124 and the digit line conductive plug 122 are isolated fromeach other by a dielectric 126. Each of the conductive plugs 120 and 124can be referred to as a cell first conductive plug.

A first dielectric stack 128 is disposed above an upper surface 130 ofthe first cell conductive plugs 120, 124 and the digit line conductiveplug 122. A contact corridor 132 is opened in the first dielectric stack128, and a second conductive plug 134 is disposed in the contactcorridor 132 in immediate contact with the upper surface 130 of the cellfirst conductive plugs 120 and 122. A first barrier film 136 is disposedin immediate contact with the second conductive plug 134. A secondbarrier film 138 is disposed in immediate contact with the first barrierfilm 136. In one embodiment, the first barrier film 136 and the secondbarrier film 138 are referred to as a barrier structure 140.

A landing pad seed film 142 is disposed in the contact corridor 132 in aconformal manner such that it can have a portion that is within thecontact corridor 132 and a portion that is above the upper surface 144of the first dielectric stack 128. In one embodiment, the seed film 142has masked a protective film 146 that was used in processing. Theprotective film 146 is a remnant of processing conditions.

A storage cell stud 148 is embedded in the contact corridor 132.Additionally, the storage cell stud 148 partially extends above theupper surface 144 of the first dielectric stack 128. The storage cellstud 148 is used as the stud electrode for a stud capacitor that is oneembodiment. A storage cell dielectric film 150 is disposed over thestorage cell stud 148. Finally as to the stud capacitor structure 100, astorage cell plate 152 is disposed over the storage cell dielectric film150. Incidental to the stud capacitor structure 100, an upper dielectricstack 154 covers the other structures. The upper dielectric stack 154 isreferred to as such because of processing conditions, set forth below.

FIG. 1 illustrates a two-cell stud capacitor structure 100. A digit line(not pictured), in one embodiment a buried digit line, is to be broughtinto contact with the digit line conductive plug 122. Thereby, the studcapacitors can be accessed according to an embodiment. In oneembodiment, the gate stack 114 is activated and the left cell eithersends or receives a charge through the digit line conductive plug 122.In another embodiment, the gate stack 116 is activated and the rightcell either sends or receives a charge through the digit line conductiveplug 122.

FIG. 1A is a cross section of the stud capacitor structure duringprocessing according to an embodiment. The structure is subjected tovarious processes to arrive at the stud capacitor structure 101 depictedin FIG. 1A. In one embodiment, the upper surface 130 has been formedafter a poly-fill-and-etch process. The poly-fill-and-etch process hasresulted in the first cell first conductive plug 120, the digit lineconductive plug 122, and the second cell first conductive plug 124. Inone embodiment, the upper surface 130 is achieved by achemical-mechanical polishing (CMP) process. In one embodiment anetchback process is used to achieve the upper surface 130. In oneembodiment, the polysilicon material for the conductive plugs is ann-doped polysilicon that can be in situ doped during a chemical vapordeposition (“CVD”) process. In one embodiment, the polysilicon precursormaterial for the conductive plugs is a p-doped polysilicon that can bein situ doped during a CVD process.

FIG. 1B is a cross section of the structure depicted in FIG. 1A afterfurther processing. The stud capacitor structure 102 has been blanketdeposited with the first dielectric stack 128, and the protective film146. In one embodiment, the first dielectric stack 128 is an oxide suchas silicon oxide. In one embodiment, the first dielectric stack 128 isformed by the decomposition of tetraethyl ortho silicate (“TEOS”). Inone embodiment, the first dielectric stack 128 is formed by CVD ofborophospho silicate glass (“BPSG”). In one embodiment, the firstdielectric stack 128 is formed by CVD of phospho silicate glass (“PSG”).In one embodiment, the first dielectric stack 128 is formed by CVD ofborosilicate glass (“BSG”).

The protective film 146 is formed over the first dielectric stack 128after an optional planing operation thereon such as by CMP or etchback.The protective film 146 can have a response to an etch process that isdifferent from other materials it contacts. In one embodiment, theprotective film 146 is selected from titanium (Ti), zirconium (Zr),hafnium (Hf), or combinations thereof. In one embodiment, the protectivefilm 146 is selected from vanadium, (V), niobium (Nb), tantalum, (Ta),or combinations thereof. In one embodiment, the protective film 146 isselected from chromium (Cr), molybdenum (Mo), tungsten (W), orcombinations thereof. In one embodiment, the protective film 146 isselected from cobalt (Co), rhodium (Rh), iridium (Ir), or combinationsthereof. In one embodiment, the protective film 146 is selected fromnickel (Ni), palladium (Pd), platinum (Pt), or combinations thereof. Inone embodiment, the protective film 146 is made from a silicide of oneof the above elements or their combinations. In one embodiment, theprotective film 146 is made from a nitride of one of the above elementsor their combinations. In one embodiment, the protective film 146 ismade from a silicide-nitride of one of the above elements or theircombinations.

The contact corridor 132 has been opened to expose the first and secondcell first conductive plugs 120 and 124, respectively, but the digitline conductive plug 122 remains unexposed by the process. Thereafter, aprecursor polysilicon 133 of the second conductive plug 134 (FIG. 1) isformed in the contact corridor 132 and over the protective film 146. Inone embodiment, the precursor polysilicon is formed by a CVD of an insitu doped polysilicon seed material.

FIG. 1C is a cross section of the structure depicted in FIG. 1B afterfurther processing. The stud capacitor structure 103 has been processedto remove some of the precursor polysilicon 133. The precursorpolysilicon 133 (FIG. 1B) has been etched back to create a recess withinthe contact corridor 132 and to form what will become the secondconductive plug 134. The depth within the contact corridor from theupper surface 144 of the first dielectric stack, down to the secondconductive plug 134 can be in a range from about 100 Å and about 3,000Å. In one embodiment, the depth is in a range from about 200 Å and about2,500 Å. In one embodiment, the depth is in a range from about 500 Å andabout 2,000 Å. But before the second conductive plug 134 is finished inits dimensions, a salicidation of the second conductive plug 134 iscarried out to form the first barrier film 136. In one embodiment, thefirst barrier film 136 is made by the deposition of a material such asone of the refractory metals or their combinations set forth above,followed by a salicidation process. Thereafter the unsalicidedrefractory metal is rinsed or otherwise removed according toconventional technique that is selective to the first barrier film 136,the first dielectric stack 128, and the protective film 146. In oneembodiment, the first barrier film 136 is a metal silicide material,M_(x)Si_(y), and the ratios of x to y include both stoichiometricoccurrences of metal silicide and other solid solutions.

After removal of unsalicided material that was used to form the firstbarrier film 136, the second barrier film 138 is formed. In oneembodiment, a physical vapor deposition (“PVD”) process is used tominimize wall coverage on the contact corridor 132. In one embodiment,the second barrier film 138 is a refractory metal nitride material thatis sputtered. The refractory metal nitride can include a nitride of oneof the refractory metals or their combinations as set forth above. Inone embodiment, a collimated sputtering is carried out in order tominimize deposition on the walls of the contact corridor. In oneembodiment, a tantalum nitride second barrier film 138 is formed uponthe first barrier film 136. In one embodiment, the second barrier film138 is a refractory metal silicide. In one embodiment, the secondbarrier film 138 is a refractory metal silicide-nitride. In oneembodiment, the second barrier film 138 is tantalum nitride that can bein either stoichiometric or other solid-solution ratios.

A mask 158 is formed to fill the contact corridor 132, and excess secondbarrier film 138 is removed, while the second barrier film 138 withinthe contact corridor 132 is protected by the mask 158. The excess secondbarrier film 138 is etched according to a conventional etch recipe thatis selective to the protective film 146.

FIG. 1D is a cross section of the structure depicted in FIG. 1C afterfurther processing. The stud capacitor structure 104 is patterned with alanding pad seed film 142 that will assist in the deposition of thestorage cell stud 148 (FIG. 1). In one embodiment, deposition is carriedout by CVD. In one embodiment, deposition is carried out by atomic-layerdeposition (“ALD”). In one embodiment, deposition is carried out by PVD.After formation of the second barrier film 138 the contact corridor 132is partially filled, but it has a sufficient recess to receive a stud.The seed film 142 is formed by a deposition process. The seed film 142is used to facilitate subsequent through-hole deposition of a selectedstud material. In one embodiment, the seed film 142 is one of the metalsor their combinations as set forth above. In one embodiment, the seedfilm 142 is formed by CVD such that a conformal film coats the sidewallsof the unfilled portions of the contact corridor 132. Thereafter, a mask160 is patterned, and the excess seed film 142 is removed by an etchthat stops on the protective film 146.

In one embodiment, the seed film 142 includes substantially the samemetal as will be deposited by through-hole deposition to form thestorage cell stud 148. In one embodiment, a metal that is not the sameas the storage cell stud 148 is used as the seed film 142. For example,the same unit cell structure such as according to the Miller-Bravaislattice system is selected. In one embodiment, the seed film 142includes a platinum material in anticipation of the storage cell stud148 being substantially the same platinum that will be formed bythrough-hole deposition according to known technique. In one embodiment,the seed film 142 includes a rhodium material in anticipation of thestorage cell stud 148 being substantially the same material. In oneembodiment, the seed film 142 includes a ruthenium material inanticipation of the storage cell stud 148 being substantially the samematerial. In one embodiment, the seed film 142 includes an iridiummaterial in anticipation of the storage cell stud 148 beingsubstantially the same material. In one embodiment, the seed film 142includes a palladium material in anticipation of the storage cell stud148 being substantially the same material. In one embodiment, the seedfilm 142 includes an alloy material. In one embodiment, the seed film142 includes an alloy of one of the above materials.

The size of the mask 160 is depicted in FIG. 1D to overlap the contactcorridor 132, onto the protective film 146. In one embodiment, the sizeof the mask 160 can be narrower, such that there is substantially noseed film 142 material in vertical contact with the protective film 146.Etching is carried out to remove unmasked portions of the seed film 142,and to stop on the protective film 146 if it is present.

FIG. 1E is a cross section of the structure depicted in FIG. 1D afterfurther processing. The stud capacitor structure 105 has been blanketdeposited with the second dielectric stack 156. The second dielectricstack 156 is depicted as having been patterned and etched such that thecontact corridor 132 has been re-opened and probably widened within thesecond dielectric stack 156 due to processing limitations. At thisprocess flow, the stud capacitor structure 105 is prepared to receive astorage cell stud.

FIG. 1F is a cross section of the structure depicted in FIG. 1E afterfurther processing. The stud capacitor structure 106 has been processedto form the storage cell stud 148. In one embodiment, the seed film 142is used as a nucleation site to assist metal deposition. In oneembodiment, an electrolytic through-hole deposition process is used toform the storage cell stud 148. Because the seed film 142 initiallycoats the sidewalls of the contact corridor 132, initial deposition canbe more rapid due to the increased surface area caused by the coatedsidewalls. However, as deposition at all other conditions beingunchanged, is a function of surface area, deposition can becomesubstantially steady once the storage cell stud 148 is growing above thelevel of the protective film 146.

In one embodiment, the seed film 142 is deposited by PVD such that thesidewalls of the contact corridor 132 are substantially uncoated (notpictured). In this embodiment, a substantially unchanging depositionsurface is presented to the deposition solution.

In one embodiment, electroplating is carried out by connecting acathodic charge to the protective film 146, and plating platinum ontothe seed film 142. The morphology of the plated storage cell stud 148can be affected by the chemistry of the plating solution, the morphologyof the seed film 142, and the current that is used to deposit theplatinum onto the seed film 142. In one embodiment, the electroplatingconditions include a current from about 1 milliAmpere (mA) to about 10mA. The applied voltage is in the range from about −2 Volt to about 2Volt. The temperature is from about 50° C. to about 100° C. The startingconcentration of platinum ions in solution is from about 1 mole/L toabout 10 mole/L.

In one embodiment, an electroless plating process is carried out. In oneembodiment, electroless plating is done under conditions that cause arelatively large solution mass to contact a relatively small surfacearea of the seed film 142. In one variation of this embodiment, thevolume of the plating solution is diminished no more than about 50% ofits dissolved platinum ions, if platinum is the material to bedeposited. In one variation of this embodiment, the volume of theplating solution is diminished no more than about 10% of its dissolvedplatinum ions. In one variation of this embodiment, the volume of theplating solution is diminished no more than about 5% of its dissolvedplatinum ions. Consequently, the platinum concentration is sufficientlylarge so as to not cause the deposition chemistry to be significantlyaffected.

In one embodiment for electroless plating, the starting concentration ofplatinum ions, from a source of H₂PtCl₆ in solution, is from about2.5×10⁻³ mole/L to about 2.5×10⁻² mole/L. In one embodiment, thesolution includes a reducing agent such as hydrazine dihydrochloride.Other conditions include a pH of about 2, and temperature range fromabout 65° C. to about 75° C.

In one embodiment, the storage cell stud 148 is formed from one of themetals or their combinations as set forth above. In one embodiment, thestorage cell stud 148 is a platinum material. In one embodiment, thestorage cell stud 148 is a ruthenium material. In one embodiment, thestorage cell stud 148 is an iridium material. In one embodiment, thestorage cell stud 148 is a palladium material. In one embodiment, thestorage cell stud 148 is an alloy such as an alloy of at least twomaterials. After deposition is completed, the storage cell stud 148 isplanarized as depicted in FIG. 1F.

FIG. 1G is a cross section of the structure depicted in FIG. 1F afterfurther processing. The stud capacitor structure 107 has been processedto expose the storage cell stud 148. A rinse or wet etch is carried outto substantially remove the second dielectric stack 156. The protectivelayer 146 is used during this process as an etch stop to preventdielectric stack 128 from being etched during the removal of the seconddielectric stack 156. The protective layer 146 is also removed frombetween the studs so that they are electrically isolated from oneanother. This process can be done with a wet etch such as a diluteammonium hydroxide solution that is mixed with hydrogen peroxide.

FIG. 1 is a cross section of the structure depicted in FIG. 1G afterfurther processing. The stud capacitor structure 100 has been processedto isolate the storage cell stud 148 from a cell plate. The protectivefilm 146, that has optionally been used as a cathode source inelectrolytic deposition of the storage cell stud 148, is removed by anetch (FIG. 1G). In one embodiment, the protective film 146 is dryetched. In one embodiment, the protective film 146 is wet etched, suchthat some undercutting beneath the seed film 142 can occur. The studcapacitor structure 107 is then ready to receive a storage celldielectric film and a storage cell plate.

The storage cell dielectric film 150 is next formed. In one embodiment,the storage cell dielectric film 150 is formed by a CVD process. Thestorage cell dielectric film 150 is deposited to a thickness in a rangefrom about 30 Å to about 80 Å. In one embodiment, the storage celldielectric film 150 is deposited to a thickness in a range from about 50Å to about 60 Å.

In one embodiment, a high permitivity material is selected. In oneembodiment, a material is deposited by CVD or ALD. In one embodiment,tantalum oxide is deposited by one of CVD or ALD. The storage celldielectric film 150 can be further annealed in an oxygen environment.

Other materials can be used to form the storage cell dielectric film150. In one embodiment, alumina is formed. In one embodiment, bariumstrontium titanate is formed. In one embodiment, strontium titanate isformed. In one embodiment, silicon nitride is formed. In one embodiment,lead-zirconium-titanate (“PZT”) is formed. In one embodiment,lead-lanthanum-zirconium-titanate (“PLZT”) is formed. In one embodiment,lead-lanthanum-titanate (“PLT”) is formed. In one embodiment, strontiumbismuth tantalate (“SBT”) is formed. In one embodiment, strontiumbismuth niobium tantalate (“SBTN”) is formed. In one embodiment,strontium bismuth niobium (“SBN”) is formed. Other materials known inthe art can also be used according to a given application.

Materials with various dielectric constants can be chosen for thestorage cell dielectric film 150. In one embodiment, a tantalumpentoxide film is formed that is amorphous as can be measured by adielectric constant in a range from about 18 to about 20. In oneembodiment a tantalum pentoxide film is formed that is substantiallycrystalline as can be measured by a dielectric constant in a range fromabout 20 to about 40. In one embodiment, a silicon nitride film isformed that can be measured by a dielectric constant in a range fromabout 7 to about 8. In one embodiment, an alumina film is formed thatcan be measured by a dielectric constant in a range from about 9 toabout 10. In one embodiment, a film is formed that can be measured tohave a dielectric constant in a range from about 9 to about 300.

Processing conditions for the formation of an amorphous tantalumpentoxide film include a temperature in a range from about 400° C. toabout 500° C. Processing conditions for the formation of a substantiallycrystalline tantalum pentoxide film include a temperature in a rangefrom about 700° C. to about 800° C.

After the formation of the storage cell dielectric film 150, the storagecell plate 152 is formed. In one embodiment the storage cell plate 152is a metal such as any of the metals or combinations that are set forthabove. In one embodiment, the storage cell plate 152 is a platinummaterial, and the storage cell stud 148 is also a platinum material.

After completion of the stud capacitor structure 100, an upperdielectric stack 154 is formed over the stud. In one embodiment, theupper dielectric stack 154 is formed by a conventional CVD process tosubstantially fill in the spaces between the capacitor structures.

FIG. 2 is a process flow diagram 200 that illustrates various exemplaryprocess embodiments depicted in FIGS. 1A through 1G.

At 210 a second conductive plug is formed above a first conductive plug.Relating to an embodiment depicted in the FIGS., the second conductiveplug 134 is formed above the first cell first conductive plug 120.

At 220, a barrier structure is formed above the second conductive plug.Relating to an embodiment depicted in the FIGS., the barrier structureincludes the first barrier film 136 and the second barrier film 138. Inone embodiment at 222, it is noted that the barrier structure is formedin a recess that is the contact corridor 132.

In an alternative embodiment at 224, it is noted that the barrierstructure is formed first on the second conductive plug, and thereafterit is exposed by opening a contact corridor that is substantiallycoaxial with the contact corridor 132. In this alternative embodiment,the second conductive plug 134, the first barrier film 136 and thesecond barrier film 138 are patterned as a stack before formation of thefirst dielectric stack 128. Although other process integration issuesarise with this alternative embodiment, it can be utilized wheresidewall coverage of the second barrier film 138 in the contact corridorpresents a quality and/or yield issue. Further, this alternativeembodiment avoids the process of forming the mask 158 (FIG. 1C), theetchback of the polysilicon precursor 133, and the etchback of thesecond barrier film 138 that is upon the protective film 146 (FIG. 1C).

At 230 a seed film is formed above the barrier structure. Relating to anembodiment depicted in the FIGS., the seed film 142 is formed by a CVDprocess to coat the protective film 146, the sidewalls of the contactcorridor 132, and the exposed surface of the second barrier film 138.

At 240, a stud is embedded in the recess. Relating to an embodimentdepicted in the FIGS., the stud is the storage cell stud 148 that isembedded partially in the recess that is the contact corridor 132. Thestud is embedded by a method selected from through-hole electroplatingand through-hole electroless plating, and combinations thereof.

At 250, a storage cell dielectric film is formed over the stud. Relatingto an embodiment depicted in the FIGS., the storage cell dielectric film150 is formed by CVD, after the protective film 146 has been etched toisolate the storage cell stud 148.

At 260, a storage cell plate is formed over the storage cell dielectricfilm. Relating to an embodiment depicted in the FIGS., the storage cellplate 152 is formed by CVD of a metal.

FIG. 3 is a cross section of another stud capacitor structure 300according to an embodiment. A substrate 310 includes an active area (notpictured) and a series of gate stacks 312, 314, 316, and 318. Betweenthe gate stacks 312 and 314 is a first cell first conductive plug 320.Between the gate stacks 314 and 316 is a digit line conductive plug 322.And between the gate stacks 316 and 318 is a second cell firstconductive plug 324. By way of non-limiting example, the cell firstconductive plugs 320, 324 and the digit line conductive plug 322 areisolated from each other by a dielectric 326.

A first dielectric stack 328 is disposed above an upper surface 330 ofthe cell first conductive plugs 320, 324 and the digit line conductiveplug 322. A contact corridor 332 is disposed in the first dielectricstack 328, and a first barrier film 336 is disposed in immediate contactwith the first cell first conductive plug 320 and the second cell firstconductive plug 324. A second barrier film 338 is disposed in immediatecontact with the first barrier film 336. In one embodiment, the firstbarrier film 336 and the second barrier film 338 are referred to as abarrier structure 340. It is noted that the barrier structure 340 isrecessed below the upper surface 330 of the first dielectric stack 328.

A landing pad seed film 342 is disposed in the contact corridor 332 in aconformal manner such that it can have a portion that is within thecontact corridor 332 and a portion that is above the upper surface 344of the first dielectric stack 328. In one embodiment, the seed film 342has masked a protective film 346 that was used in processing.

A storage cell stud 348 is partially embedded in the contact corridor332. The storage cell stud 348 also extends above the upper surface 344of the first dielectric stack 328. The storage cell stud 348 is used asthe electrode for a stud capacitor that is one embodiment. A storagecell dielectric film 350 is disposed over the storage cell stud 348.Finally as to the stud capacitor, a storage cell plate 352 is disposedover the storage cell dielectric film 350. Incidental to the structure300, an upper dielectric stack 354 covers the other structures. Theupper dielectric stack 354 is referred to as such because of processingconditions, set forth below.

FIG. 3 illustrates a two-cell structure 300. A digit line (notpictured), in one embodiment a buried digit line is to be brought intocontact with the digit line conductive plug 322. Thereby, the studcapacitors can be accessed according to an embodiment. In oneembodiment, the gate stack 314 is activated and the left cell eithersends or receives a charge. In another embodiment, the gate stack 316 isactivated and the right cell either sends or receives a charge.

FIG. 3A is a cross section of the stud capacitor structure 301 duringprocessing according to an embodiment. Various processes are carried outto arrive at the stud capacitor structure 301 depicted in FIG. 3A.Processing has resulted in the first cell first conductive plug 320, thedigit line conductive plug 322, and the second cell first conductiveplug 324. The conductive plugs are formed by depositing a precursorpolysilicon (not pictured) and thereafter etching back to form the firstcell first conductive plug 320, the digit line conductive plug 122, andthe second cell first conductive plug 124. Each of the first cell firstconductive plug 320, the digit line conductive plug 322, and the secondcell first conductive plug 324 is recessed as a result of the etchbackprocess. Before the conductive plugs 320, 322, and 324 are finished intheir dimensions, a salicidation is carried out to form the firstbarrier film 336. In one embodiment, the first barrier film 336 is madeby the deposition of a material such as one of the refractory metals ortheir combinations set forth above, followed by a salicidation process.Thereafter the unsalicided refractory metal is rinsed according toconventional technique that is selective to the first barrier film 336and the dielectric 326. In one embodiment, the first barrier film 336 isa metal silicide material, M_(x)Si_(y), and the ratios of x to y includeboth stoichiometric occurrences of metal silicide and other solidsolutions.

FIG. 3B is a cross section of the structure depicted in FIG. 3A afterfurther processing. After removal of unsalicided material that was usedto form the first barrier film 336, the second barrier film 338 isformed. For the sake of illustrative clarity, it is noted that the firstand second barrier films are not illustrated between the second gatestack 314 and the third gate stack 316, where the digit line conductiveplug 322 is. However, it is understood that a barrier structure would bepresent unless measures are taken to prevent the formation thereof.

In one embodiment, the second barrier film 338 is a refractory metalnitride material that is sputtered. The refractory metal nitride caninclude one of the refractory metals or their mixtures as set forthabove. In one embodiment, a tantalum nitride second barrier film 338 isformed upon the first barrier film 336.

After deposition of the second barrier film 338, the structure 302 isplanarized such as by CMP to obtain the upper surface 330.

FIG. 3C is a cross section of the structure depicted in FIG. 3B afterfurther processing. The stud capacitor structure 303 has been patternedwith a mask 356. The opened pattern 331 is a precursor to the contactcorridor 332 that has been etched subsequent to patterning the mask 356.The contact corridor 332 has been opened to expose the second barrierfilm 338 that surmounts the first and second cell first conductive plugs320 and 324, respectively, but the digit line conductive plug 322remains unexposed by the process.

FIG. 3D is a cross section of the structure depicted in FIG. 3C afterfurther processing. After formation of the contact corridor 332 thelanding pad seed film 342 is formed by a deposition process. In oneembodiment, deposition is carried out by CVD. In one embodiment,deposition is carried out by ALD. In one embodiment, deposition iscarried out by PVD. The seed film 342 is used to facilitate subsequentthrough-hole deposition of a selected stud material. In one embodiment,the seed film 342 is one of the metals or their combinations as setforth above. In one embodiment, the seed film 342 is formed by CVD suchthat a conformal film coats the sidewalls of the contact corridor 332.Thereafter, a mask (not pictured) is patterned, and the excess seed filmis removed by an etch that stops on the protective film 346.

In one embodiment, the seed film 342 includes substantially the samemetal as will be deposited by through-hole deposition to form thestorage cell stud. In one embodiment, a metal that is not the same asthe storage cell stud is used as the seed film 342. In one embodiment,the seed film 342 includes a platinum material in anticipation of thestud being substantially the same platinum that will be formed bythrough-hole deposition according to known technique.

The size of the mask (not pictured) can overlap the contact corridor332, onto the protective film 346 to achieve a seed film 342 in theshape depicted in FIG. 3D. In one embodiment, the size of the mask canbe narrower, such that there is substantially no material in verticalcontact with the protective film 346. Horizontal contact must occur,however, between the seed film 342 and the protective film 346.

FIG. 3E is a cross section of the structure depicted in FIG. 3D afterfurther processing. In FIG. 3E, the stud capacitor structure 305 hasbeen blanket deposited with a second dielectric stack 356. The seconddielectric stack 356 is depicted as having been patterned and etchedsuch that the contact corridor 332 has been re-opened, although it maybe wider in the second dielectric stack 356 (see the second dielectricstack 156, FIG. 1E, for example) due to processing limitations. At thisprocess flow, the stud capacitor structure 305 is prepared to receive astud.

FIG. 3F is a cross section of the structure depicted in FIG. 3E afterfurther processing. The stud capacitor structure 306 has been processedto form the storage cell stud 348. In one embodiment, the seed film 342is used in an electrolytic through-hole deposition process to form thestorage cell stud 348. The protective film 346 is used as a cathode inthe electrolytic through-hole deposition process. In one embodiment, thestorage cell stud 348 is formed from one of the metals or theircombinations as set forth above. In one embodiment, the storage cellstud 348 is a platinum material. In one embodiment, the storage cellstud 348 is a ruthenium material. In one embodiment, the storage cellstud 348 is a rubidium material. In one embodiment, the storage cellstud 348 is an iridium material. In one embodiment, the storage cellstud 348 is a palladium material. In one embodiment, the storage cellstud 348 is an alloy of at least two materials. Because the seed film342 initially coats the sidewalls of the contact corridor 332, initialdeposition can be more rapid due to the increased surface area caused bythe coated sidewalls. However, deposition with all other conditionsbeing unchanged, is a function of surface area, deposition can becomesubstantially steady once the storage cell stud 348 is growing above thelevel of the protective film 346. After deposition is completed, thestorage cell stud 348 is planarized as depicted in FIG. 3F.

FIG. 3G is a cross section of the structure depicted in FIG. 3F afterfurther processing. The stud capacitor structure 307 has been processedto expose the storage cell stud 348. A rinse or wet etch is carried outto substantially remove the second dielectric stack 356. The studcapacitor structure 307 is then ready to receive a storage celldielectric film and a storage cell plate.

FIG. 3 is a cross section of the structure depicted in FIG. 3G afterfurther processing. The stud capacitor structure 300 has been processedto isolate the storage cell stud 348 from a cell plate. The protectivefilm 346, that has optionally been used as a cathode source inelectrolytic deposition of the storage cell stud 348, is removed by anetch. In one embodiment, the protective film 346 is dry etched. In oneembodiment, the protective film 346 is wet etched, such that someundercutting beneath the seed film 342 can occur.

The storage cell dielectric film 350 is next formed. Formation of thestorage cell dielectric film 350 can be done by any of the embodimentsset forth with respect to the formation of the storage cell dielectricfilm 150 depicted in FIG. 1.

After the formation of the storage cell dielectric film 350, the storagecell plate 352 is formed. In one embodiment the storage cell plate 352is a metal such as any of the metals that are set forth above. In oneembodiment, the storage cell plate 352 is a platinum material, and thestorage cell stud 348 is also a platinum material. In one embodiment,the storage cell plate 352 is a first material, and the storage cellstud 348 is a second material that is not qualitatively the same as thefirst material. The first material and the second material can beselected from the various materials set forth in this disclosure, andfrom their art-recognized equivalents.

After completion of the stud capacitor structure 300, a third dielectricstack 354 is formed over the stud.

FIG. 4 is a process flow diagram 400 that illustrates various exemplaryprocess embodiments depicted in FIGS. 3 through 3G.

At 410 a barrier structure is formed above a first conductive plug.Relating to an embodiment depicted in the FIGS., the barrier structure340 is formed above the first cell first conductive plug 320.

At 420, a seed film is formed above the barrier structure. Relating toan embodiment depicted in the FIGS., the seed film 342 is formed by adeposition process to optionally coat the protective film 346 athorizontal surfaces, the sidewalls of the contact corridor 332, and theexposed surface of the second barrier film 338.

At 430, a stud is embedded in the recess. Relating to an embodimentdepicted in the FIGS., the stud is the storage cell stud 348 that isembedded partially in the recess that is the contact corridor 332. Thestud is embedded by a method selected from electroplating andelectroless plating, and combinations thereof.

At 440, a storage cell dielectric film is formed over the stud. Relatingto an embodiment depicted in the FIGS., the storage cell dielectric film350 is formed by CVD, after the protective film 346 has been etched toisolate the storage cell stud 348.

At 450, a storage cell plate is formed over the storage cell dielectricfilm. Relating to an embodiment depicted in the FIGS., the storage cellplate 352 is formed by CVD of a metal.

In all embodiments, the characteristic dimension of various features istied to the process photolithography. In one embodiment, thecharacteristic dimension is the critical dimension of a set ofphotolithographic design rules. By way of further reference, accordingto design rules, a characteristic dimension may be part of the metric ofthe structure depicted in FIG. 1 or 3. In this embodiment, the minimumfeature may be the diameter of a contact corridor that accommodates thepolysilicon conductive plug. Accordingly, the characteristic dimensionis the minimum feature. For example, photolithography process flows mayhave a minimum feature geometry that is one of 0.25 micrometers(microns), 0.18 microns, 0.15 microns, 0.13 microns, and 0.11 microns.It is understood that the various metrics such as a 0.15-micronphotolithography geometry may have different dimensions in a firstbusiness entity compared to a second business entity. Accordingly, suchmetrics, although quantitatively called out, can differ between twogiven business entities. Other minimum features that may be accomplishedin the future are applicable to the various embodiments.

FIGS. 5 through 10 illustrate other embodiments. The processes andstructures that are achieved in the various embodiments are inventivelyapplicable to a variety of devices and apparatuses. Specific systems canbe made by process embodiments, or that include an embodiment orembodiments of the structure as disclosed herein. For example, a chippackage can contain a stud capacitor DRAM structure according to anembodiment. In one embodiment, the DRAM structure is operated insychronous DRAM (“SDRAM”) mode. In one embodiment, the DRAM structure isoperated in double data-rate DRAM (“DDRAM”) mode.

In another example, the stud capacitor is coupled to a sense amplifier,or a trace between active devices on a substrate. In one embodiment, anarray of stud capacitors is part of a 2-dimensional array of storagedevices such as a DRAM array. In another embodiment, the stud capacitorstructure is part of an electrical device that includes thesemiconductor substrate in a chip package and the chip package is partof a memory module or part of a chipset. In another embodiment, thememory module is part of a DRAM module that is inserted into a host suchas a motherboard or a digital computer. In another embodiment, specificsystems can be made that include the stud capacitor structure. Forexample, a chip package can contain a stud capacitor structure such asone set forth in this disclosure. In another embodiment, the studcapacitor structure is part of an electrical device that includes thesemiconductor substrate in a chip package and the chip package is partof a memory module or part of a chipset. In another embodiment, thememory module is part of a dynamic random access memory module that isinserted into a host such as a motherboard or a digital computer. Inanother embodiment, the stud capacitor structure is part of anelectronic system. In another embodiment, the stud capacitor structureis fabricated with a floating gate. In another embodiment, the studcapacitor structure is fabricated with a floating gate that is part of aflash memory device that in turn is part of a chipset such as a basicinput-output system (BIOS) for an electrical device.

FIG. 5 is a top view of a wafer 500 or substrate containingsemiconductor dies in accordance with an embodiment. With reference toFIG. 5, a semiconductor die 510 can be produced from the silicon wafer500 that contains at least one of the stud capacitor structures such asare depicted in the FIGS. A die 510 is an individual pattern, typicallyrectangular, on a substrate such as substrate 110 (FIG. 1) or substrate310 (FIG. 3) that contains circuitry to perform a specific function. Asemiconductor wafer 500 will typically contain a repeated pattern ofsuch dies 510 containing the same functionality. The die 510 can furthercontain additional circuitry to extend to such complex devices as amonolithic processor with multiple functionality. The die 510 istypically packaged in a protective casing (not shown) with leadsextending therefrom (not shown) providing access to the circuitry of thedie 510 for unilateral or bilateral communication and control. In oneembodiment, the die 510 is incased in a host such as a chip package (notshown) such as a chip-scale package (CSP).

FIG. 6 is a block diagram of a circuit module 600 in accordance with anembodiment. As shown in FIG. 6, two or more dies 510 at least one ofwhich contains at least one stud capacitor structure such as aredepicted in FIGS. 1 and 3 in accordance with various embodiments can becombined, with or without protective casing, into a host such as acircuit module 600 to enhance or extend the functionality of anindividual die 510. Circuit module 600 can be a combination of dies 510representing a variety of functions, or a combination of dies 510containing the same functionality. Some examples of a circuit module 600include memory modules, device drivers, power modules, communicationmodems, processor modules and application-specific modules and caninclude multi-layer, multi-chip modules. Circuit module 600 can be asub-component of a variety of electronic systems, such as a clock, atelevision, a cell phone, a personal computer, an automobile, anindustrial control system, an aircraft, a hand-held, and others. Circuitmodule 600 will have a variety of leads 610 extending therefromproviding unilateral or bilateral communication and control. In anotherembodiment, circuit module 600 includes the stud capacitor structuredepicted in FIG. 1 or in FIG. 3 as a two-cell precursor that will befabricated into a storage device.

FIG. 7 is a block diagram of a memory module 700 in accordance with anembodiment. FIG. 7 shows one embodiment of a circuit module as a memorymodule 700 containing a stud capacitor structure embodiment such as aredepicted in FIGS. 1 and 3. Memory module 700 is a host that generallydepicts a Single In-line Memory Module (“SIMM”) or Dual In-line MemoryModule (“DIMM”). A SIMM or DIMM can generally be a printed circuit board(“PCB”) or other support containing a series of memory devices. While aSIMM will have a single in-line set of contacts or leads, a DIMM willhave a set of leads on each side of the support with each setrepresenting separate I/O signals. Memory module 700 contains multiplememory devices 710 contained on a support 715, the number depending uponthe desired bus width and the desire for parity. Memory module 700 cancontain memory devices 710 on both sides of support 715. Memory module700 accepts a command signal from an external controller (not shown) ona command link 720 and provides for data input and data output on datalinks 730. The command link 720 and data links 730 are connected toleads 740 extending from the support 715. Leads 740 are shown forconceptual purposes and are not limited to the positions shown in FIG.7.

FIG. 8 is a block diagram of an electronic system 800 in accordance withanother embodiment. FIG. 8 shows another host type such as an electronicsystem 800 containing one or more circuit modules 600 as described abovecontaining at least one of the stud capacitor structures. Electronicsystem 800 generally contains a user interface 810. User interface 810provides a user of the electronic system 800 with some form of controlor observation of the results of the electronic system 800. Someexamples of user interface 810 include the keyboard, pointing device,monitor and printer of a personal computer; the tuning dial, display andspeakers of a radio; the ignition switch or gas pedal of an automobile;and the card reader, keypad, display and currency dispenser of anautomated teller machine. User interface 810 can further describe accessports provided to electronic system 800. Access ports are used toconnect an electronic system to the more tangible user interfacecomponents previously exemplified. One or more of the circuit modules600 can be a processor providing some form of manipulation, control ordirection of inputs from or outputs to user interface 810, or of otherinformation either preprogrammed into, or otherwise provided to,electronic system 800. As will be apparent from the lists of examplespreviously given, electronic system 800 will often contain certainmechanical components (not shown) in addition to the circuit modules 600and user interface 810. It will be appreciated that the one or morecircuit modules 600 in electronic system 800 can be replaced by a singleintegrated circuit. Furthermore, electronic system 800 can be asub-component of a larger electronic system.

FIG. 9 is a block diagram of a memory system 900 in accordance with anembodiment. FIG. 9 shows one embodiment of an electrical device at asystem level. Memory system 900 acts as a higher-level host thatcontains one or more memory devices 710 as described above including atleast one of the stud capacitor structures as set forth herein inaccordance with various embodiments, and a memory controller 910 thatcan also include circuitry that is connected with a stud capacitorstructure as set forth herein. Memory controller 910 provides andcontrols a bidirectional interface between memory system 900 and anexternal system bus 920. Memory system 900 accepts a command signal fromthe external system bus 920 and relays it to the one or more memorydevices 710 on a command link 930. Memory system 900 provides for datainput and data output between the one or more memory devices 710 andexternal system bus 920 on data links 940.

FIG. 10 is a block diagram of a computer system 1000 in accordance withan embodiment. FIG. 10 shows a further embodiment of an electronicsystem as a computer system 1000. Computer system 1000 contains aprocessor 1010 and a memory system 900 housed in a computer unit 1015.Computer system 1000 is but one example of an electronic systemcontaining another electronic system, i.e. memory system 900, as asub-component. The computer system 1000 can contain an input/output(I/O) circuit 1020 that is coupled to the processor 1010 and the memorysystem 900. Computer system 1000 optionally contains user interfacecomponents that are coupled to the I/O circuit 1020. In accordance withthe various embodiments, a plurality of stud capacitor structures can becoupled to one of a plurality of I/O pads or pins 1030 of the I/Ocircuit 1020. The I/O circuit 1020 can then be coupled a monitor 1040, aprinter 1050, a bulk storage device 1060, a keyboard 1070 and a pointingdevice 1080. It will be appreciated that other components are oftenassociated with computer system 1000 such as modems, device drivercards, additional storage devices, etc. It will further be appreciatedthat the processor 1010, memory system 900, I/O circuit 1020 andpartially isolated structures or data storage devices of computer system1000 can be incorporated on a single integrated circuit, and/or thateach of them can include a stud capacitor structure according to anembodiment. Such single package processing units reduce thecommunication time between the processor 1010 and the memory system1000.

CONCLUSION

Thus has been shown processes that result in at least one stud capacitorstructure. The stud capacitor structure includes an embedded stud thatachieves a charge capacitance. The stud capacitor structure can befabricated by various embodiments that include a polysilicon plug or abarrier film that is disposed on the polysilicon conductive plug for thestorage cell.

It is emphasized that the Abstract is provided to comply with 37 C.F.R.§1.72(b) requiring an Abstract that will allow the reader to quicklyascertain the nature and gist of the technical disclosure. It issubmitted with the understanding that it will not be used to interpretor limit the scope or meaning of the claims.

In the foregoing Detailed Description, various features are groupedtogether in a single embodiment for the purpose of streamlining thedisclosure. This method of disclosure is not to be interpreted asreflecting an intention that the claimed embodiments of the inventionrequire more features than are expressly recited in each claim. Rather,as the following claims reflect, inventive subject matter lies in lessthan all features of a single disclosed embodiment. Thus the followingclaims are hereby incorporated into the Detailed Description ofEmbodiments of the Invention, with each claim standing on its own as aseparate embodiment.

While various embodiments have been described and illustrated withrespect to forming buried digit line structures, it should be apparentthat the same processing techniques can be used to form other structuresby the stacked film techniques set forth in this disclosure for otherapplications. Furthermore, the processes described herein may be used inthe development of other three-dimensional semiconductor structures, aswell as in the development of other semiconductor structures, such asgates, interconnects, contact pads, and more.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement which is calculated to achieve the same purpose maybe substituted for the specific embodiments shown. Many adaptations ofthe invention will be apparent to those of ordinary skill in the art.Accordingly, this application is intended to cover any adaptations orvariations of the invention. It is manifestly intended that thisinvention be limited only by the following claims and equivalentsthereof.

1. A process, comprising: forming an electrically conductive seed filmin a contact corridor in a first dielectric stack; forming a studelectrode in the contact corridor, wherein the stud electrode ispartially embedded in the contact corridor, and wherein the studelectrode is formed to extend from the first dielectric stack, wherein awidth of the stud electrode extending from the first dielectric stack isgreater than a width of the contact corridor; and electrically isolatingthe stud electrode.
 2. The process according to claim 1, the processfurther including forming a storage cell plate over the stud electrode.3. The process according to claim 1, wherein forming an electricallyconductive seed film includes conformally forming the seed film uponsidewalls of the contact corridor.
 4. The process according to claim 1,wherein the first dielectric stack includes an upper surface, andforming an electrically conductive seed film further includes:conformally forming the seed film upon sidewalls of the contact corridorand upon the upper surface of the first dielectric stack.
 5. The processaccording to claim 1, wherein the contact corridor includes a seconddielectric stack during the process, after forming a stud electrode inthe contact corridor, the process further including removing the seconddielectric stack.
 6. The process according to claim 1, wherein the firstdielectric stack includes an upper surface, the process furtherincluding forming a protective film upon the upper surface of the firstdielectric stack.
 7. The process according to claim 1, wherein the firstdielectric stack includes an upper surface, the process furtherincluding forming a protective film upon the upper surface of the firstdielectric stack, and wherein electrically isolating the stud electrodeincludes etching at least a portion of the protective film.
 8. Theprocess according to claim 1, wherein electrically isolating the studelectrode includes forming a storage cell dielectric film over the studelectrode.
 9. The process according to claim 1, the process furtherincluding: forming a storage cell dielectric film over the studelectrode; and forming a storage cell plate over the stud electrode. 10.The process according to claim 1, wherein forming a stud electrode isselected from through-hole electroplating, and through-hole electrolessplating.
 11. The process according to claim 1, comprising: forming astorage cell dielectric film over the stud electrode; and forming astorage cell plate on the storage cell dielectric film.
 12. A processcomprising: forming a barrier structure above a first conductive plug;forming a contact corridor to open at least a portion of the barrierstructure; forming an electrically conductive seed film in the contactcorridor, wherein the seed film makes contact with the barrierstructure; forming a stud electrode in the contact corridor, wherein thestud electrode is partially embedded in the contact corridor, andwherein the stud electrode is formed to extend from the contactcorridor, wherein a length of a portion of the stud electrode embeddedwithin the contact corridor is formed substantially equal to a length ofa portion of the stud electrode extending from the contact corridor; andelectrically isolating the stud electrode.
 13. The process according toclaim 12, further comprising: forming a second conductive plug in thecontact corridor, wherein the second conductive plug is above and on thefirst conductive plug; saliciding a portion of the second conductiveplug to form a first barrier film; and forming a second barrier filmabove and on the first barrier film, wherein the second barrier film isselected from at least one of a nitride, a silicide, or asilicide-nitride of a refractory metal.
 14. The process according toclaim 12, wherein forming a barrier structure includes: etching backprecursor polysilicon material to form the first conductive plug; andforming a silicide first barrier film above the first conductive plug.15. The process according to claim 12, forming a barrier structure overa first conductive plug further including: etching back precursorpolysilicon material to form the first conductive plug; and forming asilicide first barrier film above the first conductive plug, whereinforming a silicide first barrier film includes depositing by a processselected from CVD, PVD, and ALD, and wherein the silicide first barrierfilm includes saliciding a metal film.
 16. The process according toclaim 12, forming a barrier structure over a first conductive plugfurther including: etching back precursor polysilicon material to formthe first conductive plug; forming a silicide first barrier film abovethe first conductive plug; and forming a second barrier film above thefirst barrier film.
 17. The process according to claim 12, forming abarrier structure over a first conductive plug further including:forming a precursor polysilicon material above a substrate; etching backthe precursor polysilicon material to form the first conductive plug;forming a silicide first barrier film above the first conductive plug;and forming a second barrier film above the first barrier film, whereinthe second barrier film is formed by a process selected from CVD, PVD,and ALD, and wherein the second barrier film includes a film selectedfrom a refractory metal nitride, a refractory metal silicide, and arefractory metal silicide-nitride.
 18. The process according to claim12, forming a barrier structure over a first conductive plug furtherincluding: forming a precursor polysilicon material above a substrate;etching back the precursor polysilicon material to form the firstconductive plug; forming a silicide first barrier film above the firstconductive plug; forming a second barrier film above the first barrierfilm; and planarizing the second barrier film to form an upper surface.19. The process according to claim 12, wherein the barrier structure isformed outside of the contact corridor.
 20. A process of forming a studcapacitor structure, comprising: forming a precursor polysiliconmaterial above a substrate; etching back the precursor polysiliconmaterial to form a first conductive plug; forming a barrier structureabove the first conductive plug, wherein the barrier structure includesa salicide first barrier film and a refractory metal compound secondbarrier film; forming a seed film in a recess that opens to the barrierstructure, wherein the seed film includes a metal selected fromplatinum, ruthenium, iridium, palladium, nickel, combinations thereof,and an alloy; forming a stud electrode in the recess to embed a portionthereof in the recess, and to cause another portion thereof to extendfrom the recess; forming a dielectric film over the stud electrode; andforming a storage cell plate over the dielectric film.
 21. The processof forming a stud capacitor structure according to claim 20, whereinforming the barrier structure includes: opening a contact corridor abovethe first conductive plug; forming a second conductive plug above and onthe first conductive plug; and depositing the barrier structure into thecontact corridor.
 22. The process of forming a stud capacitor structureaccording to claim 20, wherein forming the barrier structure includessaliciding the first conductive plug.
 23. The process of forming a studcapacitor structure according to claim 20, wherein forming the barrierstructure includes: saliciding the first conductive plug; and forming arefractory metal nitride barrier film above the first conductive plug.24. A process, comprising: forming a barrier structure above a firstconductive plug; forming a contact corridor to open at least a portionof the barrier structure; forming a second conductive plug in thecontact corridor, wherein the second conductive plug is above and on thefirst conductive plug; saliciding a portion of the second conductiveplug to form a first barrier film; forming a second barrier film aboveand on the first barrier film, wherein the second barrier film isselected from at least one of a nitride, a silicide, or asilicide-nitride of a refractory metal; forming an electricallyconductive seed film in the contact corridor, wherein the seed filmmakes contact with the barrier structure; forming a stud electrode inthe contact corridor, wherein the stud electrode is partially embeddedin the contact corridor, and wherein the stud electrode is formed toextend from the contact corridor; and electrically isolating the studelectrode.
 25. The process according to claim 24, wherein the processfurther includes forming a storage cell plate over the stud electrode.26. A process, comprising: forming a barrier structure over a firstconductive plug including: etching back precursor polysilicon materialto form the first conductive plug; and forming a silicide first bafflerfilm above the first conductive plug; forming a contact corridor to openat least a portion of the barrier structure; forming an electricallyconductive seed film in the contact corridor, wherein the seed filmmakes contact with the barrier structure; forming a stud electrode inthe contact corridor, wherein the stud electrode is partially embeddedin the contact corridor, and wherein the stud electrode is formed toextend from the contact corridor; and electrically isolating the studelectrode.
 27. The process according to claim 26, wherein the barrierstructure is formed outside of the contact corridor.
 28. A process,comprising: forming a barrier structure over a first conductive plugincluding: etching back precursor polysilicon material to form the firstconductive plug; and forming a silicide first barrier film above thefirst conductive plug, wherein forming a silicide first barrier filmincludes depositing by a process selected from CVD, PVD, and ALD, andwherein the silicide first barrier film includes saliciding a metalfilm; forming a contact corridor to open at least a portion of thebarrier structure; forming an electrically conductive seed film in thecontact corridor, wherein the seed film makes contact with the barrierstructure; forming a stud electrode in the contact corridor, wherein thestud electrode is partially embedded in the contact corridor, andwherein the stud electrode is formed to extend from the contactcorridor; and electrically isolating the stud electrode.
 29. The processaccording to claim 28, wherein forming a barrier structure over a firstconductive plug further includes forming a second barrier film above thefirst barrier film.
 30. A process, comprising: forming a barrierstructure over a first conductive plug including: etching back precursorpolysilicon material to form the first conductive plug; forming asilicide first barrier film above the first conductive plug; and forminga second barrier film above the first barrier film; forming a contactcorridor to open at least a portion of the barrier structure; forming anelectrically conductive seed film in the contact corridor, wherein theseed film makes contact with the barrier structure; forming a studelectrode in the contact corridor, wherein the stud electrode ispartially embedded in the contact corridor, and wherein the studelectrode is formed to extend from the contact corridor; andelectrically isolating the stud electrode.
 31. The process according toclaim 30, wherein each of the first and second barrier films is formedoutside of the contact corridor.
 32. A process, comprising: forming abarrier structure over a first conductive plug including: forming aprecursor polysilicon material above a substrate; etching back theprecursor polysilicon material to form the first conductive plug;forming a silicide first barrier film above the first conductive plug;and forming a second barrier film above the first barrier film, whereinthe second barrier film is formed by a process selected from CVD, PVD,and ALD, and wherein the second barrier film includes a film selectedfrom a refractory metal nitride, a refractory metal silicide, and arefractory metal silicide-nitride; forming a contact corridor to open atleast a portion of the barrier structure; forming an electricallyconductive seed film in the contact corridor, wherein the seed filmmakes contact with the barrier structure; forming a stud electrode inthe contact corridor, wherein the stud electrode is partially embeddedin the contact corridor, and wherein the stud electrode is formed toextend from the contact corridor; and electrically isolating the studelectrode.
 33. The process according to claim 32, wherein forming anelectrically conductive seed film further includes conformally formingthe seed film upon sidewalls of the contact corridor and upon an uppersurface of a first dielectric stack.
 34. A process, comprising: forminga barrier structure over a first conductive plug including: forming aprecursor polysilicon material above a substrate; etching back theprecursor polysilicon material to form the first conductive plug;forming a silicide first barrier film above the first conductive plug;forming a second barrier film above the first barrier film; andplanarizing the second barrier film to form an upper surface; forming acontact corridor to open at least a portion of the barrier structure;forming an electrically conductive seed film in the contact corridor,wherein the seed film makes contact with the barrier structure; forminga stud electrode in the contact corridor, wherein the stud electrode ispartially embedded in the contact corridor, and wherein the studelectrode is formed to extend from the contact corridor; andelectrically isolating the stud electrode.
 35. The process according toclaim 33, the process further including: forming a storage celldielectric film over the stud electrode; and forming a storage cellplate over the stud electrode.
 36. A process comprising: forming aprecursor polysilicon material above a substrate; etching back precursorpolysilicon material to form the first conductive plug; forming abarrier structure above a first conductive plug; forming a contactcorridor to open at least a portion of the barrier structure; forming anelectrically conductive seed film in the contact corridor, wherein theseed film makes contact with the barrier structure; forming a studelectrode in the contact corridor, wherein the stud electrode ispartially embedded in the contact corridor, and wherein the studelectrode is formed to extend from the contact corridor, wherein alength of a portion of the stud electrode embedded within the contactcorridor is formed substantially equal to a length of a portion of thestud electrode extending from the contact corridor; and electricallyisolating the stud electrode.
 37. The process according to claim 36,wherein forming a barrier structure over a first conductive plug furtherincludes forming a silicide first barrier film above the firstconductive plug.
 38. The process according to claim 36, wherein forminga barrier structure over a first conductive plug further includesforming a silicide first barrier film above the first conductive plug,wherein forming a silicide first barrier film includes depositing by aprocess selected from CVD, PVD, and ALD, and wherein the silicide firstbarrier film includes saliciding a metal film.
 39. The process accordingto claim 36, wherein forming a barrier structure over a first conductiveplug further includes forming a silicide first barrier film above thefirst conductive plug; and forming a second barrier film above the firstbarrier film.
 40. The process according to claim 36, wherein forming abarrier structure over a first conductive plug further includes: forminga silicide first barrier film above the first conductive plug; andforming a second barrier film above the first barrier film, wherein thesecond barrier film is formed by a process selected from CVD, PVD, andALD, and wherein the second barrier film includes a film selected from arefractory metal nitride, a refractory metal suicide, and a refractorymetal silicide-nitride.
 41. The process according to claim 36, whereinforming a barrier structure over a first conductive plug furtherincludes: forming a silicide first barrier film above the firstconductive plug; forming a second barrier film above the first barrierfilm; and planarizing the second barrier film to form an upper surface.42. A process of making a stud capacitor structure, the processcomprising: forming a first conductive plug above a substrate; forming afirst dielectric stack having a corridor that is open at a top surfaceof the first dielectric stack and that opens to the first conductiveplug at a bottom surface of the first dielectric stack; forming a studelectrode that includes a first portion embedded in the corridor and asecond portion that extends from the top surface of the corridor; andelectrically isolating the second portion of the stud electrode.
 43. Theprocess according to claim 42, wherein forming the first dielectricstack includes opening the corridor in the first dielectric stack. 44.The process according to claim 42, comprising forming a secondconductive plug in the corridor, the second conductive plug formed incontact with the first conductive plug.
 45. The process according toclaim 42, wherein electrically isolating the second portion of the studelectrode further includes: forming a storage cell dielectric film overthe second portion of the stud electrode; and forming a storage cellplate over the storage cell dielectric film.
 46. The process accordingto claim 44, comprising forming a barrier structure in the corridor andabove the second conductive plug.
 47. The process according to claim 46,wherein forming of the barrier structure further includes: forming afirst barrier film in contact with the second conductive plug; andforming a second barrier film over the first barrier film and in contactwith the first barrier film.
 48. The process according to claim 46, theprocess further comprising forming an electrically conductive seed filmbetween the first dielectric stack and the stud electrode, the formationincluding a first portion of the electrically conductive seed filmformed over the barrier structure and upon sidewalls of the corridor,and a second portion of the electrically conductive seed film formedupon the top surface of the first dielectric stack.
 49. A process ofmaking a stud capacitor structure, the process comprising: forming afirst conductive plug above a substrate; forming a barrier structure ina recess above the first conductive plug; forming a first dielectricstack having a corridor that is open at a top surface of the firstdielectric stack and that opens to the barrier structure at a bottomsurface of the first dielectric stack; forming a stud electrode thatincludes a first portion embedded in the corridor and a second portionthat extends from the top surface of the corridor; and electricallyisolating the second portion of the stud electrode.
 50. The processaccording to claim 49, wherein forming the first dielectric stackfurther includes opening the corridor in the first dielectric stack. 51.The process according to claim 49, wherein forming of the barrierstructure further includes forming a first barrier film in contact withthe first conductive plug; and forming a second barrier film over thefirst barrier film and in contact with the first barrier film.
 52. Theprocess according to claim 51, comprising forming an electricallyconductive seed film between the first dielectric stack and the studelectrode, the formation including a first portion of the electricallyconductive seed film formed over the barrier structure and uponsidewalls of the corridor, and a second portion of the electricallyconductive seed film formed upon the top surface of the first dielectricstack.
 53. The process according to claim 49, wherein electricallyisolating the second portion of the stud electrode further includesforming a storage cell dielectric film over the second portion of thestud electrode; and forming a storage cell plate over the storage celldielectric film.
 54. A process, comprising: forming a first dielectricstack above a conductive plug; forming a seed film in a corridor in thefirst dielectric stack; and forming a stud electrode, wherein a portionof the stud electrode is in the corridor and wherein a portion of thestud electrode extends from the first dielectric stack, and wherein aportion of the seed film contacts a barrier structure above theconductive plug.
 55. The process according to claim 54, furthercomprising forming the conductive plug.
 56. The process according toclaim 55, wherein forming the conductive plug comprises forming apolysilicon conductive plug.
 57. The process according to claim 55,wherein forming the conductive plug comprises: forming a firstconductive plug; and forming a second conductive plug above the firstconductive plug, wherein the second conductive plug is in the corridor.58. The process according to claim 54, further comprising forming thebarrier structure above the conductive plug.
 59. The process accordingto claim 58, wherein forming the barrier structure comprises: forming afirst barrier film in contact with the conductive plug; and forming asecond barrier film in contact with the first barrier film, wherein aportion of the seed film contacts the second barrier film.
 60. Theprocess according to claim 59, wherein forming a first barrier filmcomprises forming a metal silicide material and wherein forming a secondbarrier film comprises forming a metal nitride material.
 61. A process,comprising: forming a protective film over a first dielectric stack;forming a seed film in a corridor in the first dielectric stack; forminga stud electrode, wherein a portion of the stud electrode is in thecorridor and wherein another portion of the stud electrode extends fromthe first dielectric stack; and removing at least the protective filmthat is not under the seed film.
 62. The process according to claim 61,further comprising forming a conductive plug.
 63. The process accordingto claim 62, wherein forming the conductive plug comprises forming apolysilicon conductive plug.
 64. The process according to claim 62,wherein forming the conductive plug comprises: forming a firstconductive plug; and forming a second conductive plug above the firstconductive plug, wherein the second conductive plug is in the corridor.65. The process according to claim 62, further comprising forming abarrier structure above the conductive plug.
 66. The process accordingto claim 65, wherein forming the barrier structure comprises: forming afirst barrier film in contact with the conductive plug; and forming asecond barrier film in contact with the first barrier film, wherein aportion of the seed film contacts the second barrier film.
 67. Theprocess according to claim 66, wherein forming a first barrier filmcomprises forming a metal silicide material and wherein forming a secondbarrier film comprises forming a metal nitride material.